IXTH200N075T
IXTQ200N075T
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10 V; I D = 60 A, Note 1
70
110
6800
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
1040
pF
1
2
3
C rss
190
pF
t d(on)
t r
t d(off)
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 Ω (External)
31
57
54
ns
ns
ns
t f
52
ns
Terminals: 1 - Gate
2 - Drain
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
160
35
nC
nC
Dim.
3 - Source
Millimeter
Min. Max.
Tab - Drain
Inches
Min. Max.
Q gd
R thJC
R thCH
TO-3P
TO-247
43
0.25
0.21
nC
0.35 ° C/W
° C/W
° C/W
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Source-Drain Diode
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
I S V GS = 0 V
Characteristic Values
Min. Typ. Max.
200 A
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
I SM
V SD
t rr
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
50
540
1.0
A
V
ns
S 6.15 BSC
TO-3P (IXTQ) Outline
242 BSC
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
相关PDF资料
IXTQ23N60Q MOSFET N-CH 600V 23A TO-3P
IXTQ24N55Q MOSFET N-CH 550V 24A TO-3P
IXTQ250N075T MOSFET N-CH 75V 250A TO-3P
IXTQ28N15P MOSFET N-CH TO-3P
IXTQ40N50Q MOSFET N-CH 500V 40A TO-3P
IXTQ42N25P MOSFET N-CH 250V 42A TO-3P
IXTQ44N50P MOSFET N-CH 500V 44A TO-3P
IXTQ460P2 MOSFET N-CH 500V 24A TO3P
相关代理商/技术参数
IXTQ200N085T 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ200N10T 功能描述:MOSFET 200 Amps 100V 5.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ220N055T 功能描述:MOSFET 220 Amps 55V 3.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ220N075T 功能描述:MOSFET 220 Amps 75V 4.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ22N50P 功能描述:MOSFET 22.0 Amps 500 V 0.27 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ22N60P 功能描述:MOSFET 22.0 Amps 600 V 0.33 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ230N085T 功能描述:MOSFET 230 Amps 85V 4.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ23N60Q 功能描述:MOSFET 23 Amps 600V 0.320 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube